Heisener Electronics
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STP6N120K3

1200V|6A (Tc)|150W (Tc)
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MOSFET N-CH 1200V 6A TO-220

Specifications

Brand
STMicroelectronics
Package
TO-220
Packaging
—
Weight
—

Total Inventory

274pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STP6N120K3 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 100V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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