Heisener Electronics
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STP5N120

1200V|4.7A (Tc)|160W (Tc)
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MOSFET N-CH 1200V 4.4A TO-220

Specifications

Brand
STMicroelectronics
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

130pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STP5N120 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.5Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds120pF @ 25V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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Datasheet & Documents

stp5n120.pdf

PDF Document · 12 pages

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