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650 V|33A (Tc)|250W (Tc)
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MOSFET N-CH 650V 33A TO220
Specifications
- Brand
- STMicroelectronics
- Package
- TO-220
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STP50N65DM6 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | MDmesh™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 16.5A, 10V | |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 52.5 nC @ 10 V | |
| Vgs (Max) | ±25V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 100 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 250W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220 | |
| Package / Case | TO-220-3 |
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