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STP1N105K3

1050V|1.4A (Tc)|60W (Tc)
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MOSFET N-CH 1050V 1.4A TO-220

Specifications

Brand
STMicroelectronics
Package
TO-220
Packaging
—
Weight
—

Total Inventory

1,112pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STP1N105K3 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1050V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 100V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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Datasheet & Documents

stfw1n105k3.pdf

PDF Document · 18 pages

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