Contact
Send MessageSTP12NM50
500V|12A (Tc)|160W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 500V 12A TO-220
Specifications
- Brand
- STMicroelectronics
- Package
- TO-220AB
- Packaging
- —
- Weight
- —
Total Inventory
400pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STP12NM50 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | MDmesh™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 50µA | |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 160W (Tc) | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
Recommended Products
CAP ALUM 330UF 20% 6.3V SMD
CAP ALUM 4.7UF 20% 100V RADIAL
SENSOR PROXIMITY 300MM PNP
GW-VJLPE1-EM-K2K3-A535-1-350-R18
OSLON PURE 1010 LED
MOSFET BVDSS: 8V-24V POWERDI3333
DIODE GEN PURP 800V 1A SOD123FA
CONN PLUG 7POS STRAIGHT SOLDER
CONN RCPT HSNG MALE 21POS PNL MT
CONN EDGE DUAL FMALE 24POS 0.100
PZU22B3A-Q/SOD323/SOD2
Datasheet & Documents
stb12nm50t4.pdf
PDF Document · 17 pages
