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STP11NM60A

600V|11A (Tc)|110W (Tc)
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MOSFET N-CH 600V 11A TO-220

Specifications

Brand
STMicroelectronics
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

383pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STP11NM60A from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1211pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Datasheet & Documents

stp11nm60a.pdf

PDF Document · 11 pages

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