Heisener Electronics
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STP110N55F6

55V|110A (Tc)|150W (Tc)
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MOSFET N CH 55V 110A TO-220

Specifications

Brand
STMicroelectronics
Package
TO-220
Packaging
—
Weight
—

Total Inventory

842pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STP110N55F6 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8350pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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