Heisener Electronics
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STN6N60M2

600 V|5.5A (Tc)|6W (Tc)
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MOSFET N-CH 600V 5.5A SOT223-2

Specifications

Brand
STMicroelectronics
Package
SOT-223-2
Packaging
—
Weight
—

Total Inventory

8,301pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STN6N60M2 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.25Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.2 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds220 pF @ 100 V
FET Feature-
Power Dissipation (Max)6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223-2
Package / CaseTO-261-3

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