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60V|-|2.6W (Tc)
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MOSFET P-CH 60V SOT-223
Specifications
- Brand
- STMicroelectronics
- Package
- SOT-223
- Packaging
- —
- Weight
- —
Total Inventory
238pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STN3P6F6 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | DeepGATE™, STripFET™ VI | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 48V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.6W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-223 | |
| Package / Case | TO-261-4, TO-261AA |
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Datasheet & Documents
stn3p6f6.pdf
PDF Document · 13 pages
