Heisener Electronics
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STN1N20

200V|1A (Tc)|2.9W (Tc)
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MOSFET N-CH 200V 1A SOT223

Specifications

Brand
STMicroelectronics
Package
SOT-223
Packaging
—
Weight
—

Total Inventory

453pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STN1N20 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesMESH OVERLAY™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15.7nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds206pF @ 25V
FET Feature-
Power Dissipation (Max)2.9W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

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Datasheet & Documents

stn1n20.pdf

PDF Document · 12 pages

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