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100V|4A (Tc)|2.4W (Tc)
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MOSFET N-CH 100V 4A POWERFLAT22
Specifications
- Brand
- STMicroelectronics
- Package
- PowerFlat™ (2x2)
- Packaging
- —
- Weight
- —
Total Inventory
3,721pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STL3N10F7 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | DeepGATE™, STripFET™ VII | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 408pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.4W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerFlat™ (2x2) | |
| Package / Case | 6-PowerWDFN |
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Datasheet & Documents
stl3n10f7.pdf
PDF Document · 13 pages
