Heisener Electronics
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STL100N8F7

80V|100A (Tc)|4.8W (Ta), 120W (Tc)
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MOSFET N-CH 80V 100A POWERFLAT

Specifications

Brand
STMicroelectronics
Package
PowerFlat™ (5x6)
Packaging
—
Weight
—

Total Inventory

283pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STL100N8F7 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.1Ohm @ 10A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs46.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3435pF @ 40V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 120W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (5x6)
Package / Case8-PowerVDFN

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Datasheet & Documents

stl100n8f7.pdf

PDF Document · 14 pages

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