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900V|6A (Tc)|110W (Tc)
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N-CHANNEL 900 V, 2.1 OHM TYP., 3
Specifications
- Brand
- STMicroelectronics
- Package
- I2PAK
- Packaging
- —
- Weight
- —
Total Inventory
503pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STI6N90K5 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | MDmesh™ K5 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 900V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | 110W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | I2PAK | |
| Package / Case | TO-262-3 Full Pack, I²Pak |
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Datasheet & Documents
sti6n90k5.pdf
PDF Document · 12 pages
