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STI6N80K5

800V|4.5A (Tc)|85W (Tc)
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MOSFET N-CH 800V 4.5A I2PAK

Specifications

Brand
STMicroelectronics
Package
I2PAK (TO-262)
Packaging
—
Weight
—

Total Inventory

102pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STI6N80K5 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH5™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 10V
Vgs (Max)30V
Input Capacitance (Ciss) (Max) @ Vds255pF @ 100V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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Datasheet & Documents

sti6n80k5.pdf

PDF Document · 26 pages

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