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STI33N65M2

650V|24A (Tc)|190W (Tc)
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MOSFET N-CH 650V 24A I2PAK

Specifications

Brand
STMicroelectronics
Package
I2PAK
Packaging
—
Weight
—

Total Inventory

352pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STI33N65M2 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs140mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1790pF @ 100V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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Datasheet & Documents

sti33n65m2.pdf

PDF Document · 23 pages

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