Heisener Electronics
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STI33N60M6

600 V|25A (Tc)|190W (Tc)
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MOSFET N-CH 600V 25A I2PAK

Specifications

Brand
STMicroelectronics
Package
TO-262 (I2PAK)
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STI33N60M6 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33.4 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1515 pF @ 100 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262 (I2PAK)
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA

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