STI18N65M2

650V|12A (Tc)|110W (Tc)

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MOSFET N-CH 650V 12A I2PAK

1,702pcs

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Purchase Quantity

MOQ: 1 pcs

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Manufacturer	STMicroelectronics
Series	MDmesh™ M2
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	330mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 100V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA