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STH160N4LF6-2

40V|120A (Tc)|150W (Tc)
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MOSFET N-CH 40V 120A H2PAK-2

Specifications

Brand
STMicroelectronics
Package
H2Pak-2
Packaging
—
Weight
—

Total Inventory

497pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STH160N4LF6-2 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs181nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8130pF @ 20V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

sth160n4lf6-2.pdf

PDF Document · 17 pages

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