Heisener Electronics
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STH110N8F7-2

80V|110A (Tc)|170W (Tc)
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MOSFET

Specifications

Brand
STMicroelectronics
Package
H2Pak-2
Packaging
—
Weight
—

Total Inventory

342pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STH110N8F7-2 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ F7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.6mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3200pF @ 25V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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