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650V|160A|625W
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TRENCH GATE FIELD-STOP IGBT, M S
Specifications
- Brand
- STMicroelectronics
- Package
- TO-247-3 Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
931pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STGYA120M65DF2 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | * | |
| IGBT Type | NPT, Trench Field Stop | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | 160A | |
| Current - Collector Pulsed (Icm) | 360A | |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 120A | |
| Power - Max | 625W | |
| Switching Energy | 1.8mJ (on), 4.41mJ (off) | |
| Input Type | Standard | |
| Gate Charge | 420nC | |
| Td (on/off) @ 25°C | 66ns/185ns | |
| Test Condition | 400V, 120A, 4.7Ohm, 15V | |
| Reverse Recovery Time (trr) | 202ns | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 Exposed Pad | |
| Supplier Device Package | MAX247™ |
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Datasheet & Documents
stgya120m65df2.pdf
PDF Document · 17 pages
