Heisener Electronics
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STGW80H65DFB-4

650V|120A|469W
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IGBT BIPO 650V 80A TO247

Specifications

Brand
STMicroelectronics
Package
TO-247-4
Packaging
—
Weight
—

Total Inventory

191pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STGW80H65DFB-4 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)120A
Current - Collector Pulsed (Icm)240A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 80A
Power - Max469W
Switching Energy2.1mJ (on), 1.5mJ (off)
Input TypeStandard
Gate Charge414nC
Td (on/off) @ 25°C84ns/280ns
Test Condition400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr)85ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Supplier Device PackageTO-247-4L

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Datasheet & Documents

stgw80h65dfb-4.pdf

PDF Document · 16 pages

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