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Send MessageSTGW75H65DFB2-4
650 V|115 A|357 W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
TRENCH GATE FIELD-STOP, 650 V, 7
Specifications
- Brand
- STMicroelectronics
- Package
- TO-247-4
- Packaging
- —
- Weight
- —
Total Inventory
159pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STGW75H65DFB2-4 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | HB2 | |
| IGBT Type | Trench Field Stop | |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | |
| Current - Collector (Ic) (Max) | 115 A | |
| Current - Collector Pulsed (Icm) | 225 A | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A | |
| Power - Max | 357 W | |
| Switching Energy | 992µJ (on), 766µJ (off) | |
| Input Type | Standard | |
| Gate Charge | 207 nC | |
| Td (on/off) @ 25°C | 22ns/121ns | |
| Test Condition | 400V, 75A, 10Ohm, 15V | |
| Reverse Recovery Time (trr) | 88 ns | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-4 | |
| Supplier Device Package | TO-247-4 |
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