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650V|60A|258W
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TRENCH GATE FIELD-STOP IGBT M SE
Specifications
- Brand
- STMicroelectronics
- Package
- TO-247-3
- Packaging
- —
- Weight
- —
Total Inventory
562pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STGW30M65DF2 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | - | |
| IGBT Type | Trench Field Stop | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | 60A | |
| Current - Collector Pulsed (Icm) | 120A | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A | |
| Power - Max | 258W | |
| Switching Energy | 300µJ (on), 960µJ (off) | |
| Input Type | Standard | |
| Gate Charge | 80nC | |
| Td (on/off) @ 25°C | 31.6ns/115ns | |
| Test Condition | 400V, 30A, 10Ohm, 15V | |
| Reverse Recovery Time (trr) | 140ns | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247 |
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Datasheet & Documents
stgwa30m65df2.pdf
PDF Document · 17 pages
