Heisener Electronics
BOM

STGD6M65DF2

650V|12A|88W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH GATE FIELD-STOP IGBT, M S

Specifications

Brand
STMicroelectronics
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging
—
Weight
—

Total Inventory

475pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STGD6M65DF2 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesM
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)12A
Current - Collector Pulsed (Icm)24A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 6A
Power - Max88W
Switching Energy36µJ (on), 200µJ (off)
Input TypeStandard
Gate Charge21.2nC
Td (on/off) @ 25°C15ns/90ns
Test Condition400V, 6A, 22Ohm, 15V
Reverse Recovery Time (trr)140ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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Datasheet & Documents

stgd6m65df2.pdf

PDF Document · 20 pages

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