Heisener Electronics
BOM

STGB30H65DFB2

650 V|50 A|167 W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH GATE FIELD-STOP 650 V, 30

Specifications

Brand
STMicroelectronics
Package
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging
—
Weight
—

Total Inventory

3pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STGB30H65DFB2 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerSTMicroelectronics
SeriesHB2
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)90 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A
Power - Max167 W
Switching Energy270µJ (on), 310µJ (off)
Input TypeStandard
Gate Charge90 nC
Td (on/off) @ 25°C18.4ns/71ns
Test Condition400V, 30A, 6.8Ohm, 15V
Reverse Recovery Time (trr)115 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Supplier Device PackageD2PAK-3

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