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STFI4N62K3

620V|3.8A (Tc)|25W (Tc)
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MOSFET N CH 620V 3.8A I2PAKFP

Specifications

Brand
STMicroelectronics
Package
I2PAKFP (TO-281)
Packaging
—
Weight
—

Total Inventory

2,183pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STFI4N62K3 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)620V
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 50V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak

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Datasheet & Documents

stp4n62k3.pdf

PDF Document · 19 pages

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