Heisener Electronics
BOM

STF6N65K3

650V|5.4A (Tc)|30W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 650V 5.4A

Specifications

Brand
STMicroelectronics
Package
TO-220FP
Packaging
—
Weight
—

Total Inventory

1,647pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STF6N65K3 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds880pF @ 50V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

Recommended Products

RG1608P-2323-B-T5

RG1608P-2323-B-T5

RES SMD 232K OHM 0.1% 1/10W 0603

ELJ-RE6N8JFA

ELJ-RE6N8JFA

FIXED IND 6.8NH 430MA 200 MOHM

SIT9005AIL7D-28DD

SIT9005AIL7D-28DD

MEMS OSC PRG SSXO LVCMOS DS 2.8V

STF12N65M5

STF12N65M5

MOSFET N-CH 650V 8.5A TO-220FP

1N4935GHA0G

1N4935GHA0G

DIODE, FAST, 1A, 200V, 200NS, AE

ESQ-110-13-G-T-LL

ESQ-110-13-G-T-LL

ELEVATED SOCKET STRIPS

ESW-115-12-T-S

ESW-115-12-T-S

ELEVATED SOCKET STRIPS

DW-09-15-G-S-290-LL

DW-09-15-G-S-290-LL

.025" BOARD SPACERS

EMC13DREF

EMC13DREF

CONN EDGE DUAL FMALE 26POS 0.100

105-0753-150

105-0753-150

CONN TEST JACK F