Heisener Electronics
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STE110NS20FD

200V|110A (Tc)|500W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 200V 110A ISOTOP

Specifications

Brand
STMicroelectronics
Package
ISOTOP®
Packaging
—
Weight
—

Total Inventory

249pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STE110NS20FD from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerSTMicroelectronics
SeriesMESH OVERLAY™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs24mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs504nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7900pF @ 25V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageISOTOP®
Package / CaseISOTOP

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Datasheet & Documents

ste110ns20fd.pdf

PDF Document · 12 pages

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