Heisener Electronics
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STD2NM60T4

600V|2A (Tc)|46W (Tc)
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MOSFET N-CH 600V 2A DPAK

Specifications

Brand
STMicroelectronics
Package
DPAK
Packaging
—
Weight
—

Total Inventory

332pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STD2NM60T4 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.4nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds160pF @ 25V
FET Feature-
Power Dissipation (Max)46W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

std2nm60t4.pdf

PDF Document · 10 pages

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