黑森尔电子
BOM

STD18N65M2-EP

650 V|11A (Tc)|110W (Tc)
原装正品全球货源快速交付品质认证技术支持批量优惠

MOSFET N-CH 650V 11A DPAK

规格参数

品牌
STMicroelectronics
封装
TO-252 (DPAK)
包装方式
—

库存总量

0个

12小时发货

起订量:1 个

认证与授权

产品视频

了解 STMicroelectronics 的 STD18N65M2-EP 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

  • 原厂采购,全程可追溯
  • 严格的进料品质检验
  • 具竞争力的价格 & 全球快速交货
  • 专属应用工程技术支持

技术规格

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs375mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.4 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 100 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63

推荐产品

MBA0204CC3571FC100

MBA0204CC3571FC100

RES 3.57K OHM 0.4W 1% AXIAL

D55342E07B100DRTF

D55342E07B100DRTF

RES SMD 100 OHM 1% 1/4W 1206

SIT9005AIR2H-18SI

SIT9005AIR2H-18SI

MEMS OSC PRG SSXO LVCMOS CS 1.8V

2225J2000470KCT

2225J2000470KCT

CAP CER 47PF 200V C0G/NP0 2225

564R6DF0T22ZD_1

564R6DF0T22ZD_1

CAP CER 220PF 6KV RADIAL

GA0805A330JBBBR31G

GA0805A330JBBBR31G

CAP CER 33PF 100V C0G/NP0 0805

61-1330-0

61-1330-0

CONFIG SW BODY PUSHBUTTON ILLUM

0219-250MXAEP

0219-250MXAEP

FUSE GLASS 250MA 250VAC 5X20MM

PTC22SADN

PTC22SADN

CONN HEADER .100 SINGL STR 22POS

D38999-24ME26SN-LC

D38999-24ME26SN-LC

CONN RCPT HSG FMALE 26POS PNL MT