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STB80NF55L-08-1

55V|80A (Tc)|300W (Tc)
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MOSFET N-CH 55V 80A I2PAK

Specifications

Brand
STMicroelectronics
Package
I2PAK
Packaging
—
Weight
—

Total Inventory

3,140pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STB80NF55L-08-1 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds4350pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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