Contact
Send MessageSTB33N60DM6
600 V|25A (Tc)|190W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 600V 25A D2PAK
Specifications
- Brand
- STMicroelectronics
- Package
- TO-263 (D2PAK)
- Packaging
- —
- Weight
- —
Total Inventory
792pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how STB33N60DM6 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | MDmesh™ M6 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 128mOhm @ 12.5A, 10V | |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
| Vgs (Max) | ±25V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 190W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263 (D2PAK) | |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Recommended Products
RES 6.81K OHM 1/4W 1% AXIAL
RES 4.42 OHM 0.4W 1% AXIAL
RES SMD 16.5K OHM 0.1% 1/4W 1206
FERRITE CORE 77 OHM SOLID 1.85MM
MEMS OSC XO 40.0000MHZ H/LV-CMOS
SWITCH PUSHBUTTON SPDT 0.1A 125V
DC DC CONVERTER 3.3V 2W
DIODE, 1A, 200V, AEC-Q101, DO-20
RES 30 OHM 0.6W 1% RADIAL
2MM EJECTOR HEADER
