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STB33N60DM2

600V|24A (Tc)|190W (Tc)
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MOSFET N-CH 600V 24A

Specifications

Brand
STMicroelectronics
Package
D2PAK
Packaging
—
Weight
—

Total Inventory

300pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STB33N60DM2 from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1870pF @ 100V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

stb33n60dm2.pdf

PDF Document · 20 pages

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