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STB32NM50N

500V|22A (Tc)|190W (Tc)
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MOSFET N CH 500V 22A D2PAK

Specifications

Brand
STMicroelectronics
Package
TO-263 (D²Pak)
Packaging
—
Weight
—

Total Inventory

2,109pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STB32NM50N from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1973pF @ 50V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

stf32nm50n.pdf

PDF Document · 21 pages

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