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STB19NM65N

650V|15.5A (Tc)|150W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 650V 15.5A D2PAK

Specifications

Brand
STMicroelectronics
Package
D2PAK
Packaging
—
Weight
—

Total Inventory

125pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STB19NM65N from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 7.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 50V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

stf19nm65n.pdf

PDF Document · 19 pages

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