Heisener Electronics
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STB12N60DM2AG

600 V|10A (Tc)|125W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

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Specifications

Brand
STMicroelectronics
Package
TO-263 (D2PAK)
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how STB12N60DM2AG from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds614 pF @ 100 V
FET Feature-
Power Dissipation (Max)125W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2PAK)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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