SSR1N60BTM_1

600V|900mA (Tc)|2.5W (Ta), 28W (Tc)

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MOSFET N-CH 600V 0.9A DPAK

344pcs

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Purchase Quantity

MOQ: 1 pcs

Product Video

Manufacturer	ON Semiconductor
Series	-
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	215pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 28W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63