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20V|4A|1W
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MOSFET 2P-CH 20V 4A 2-1Y1A
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- 6-WDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
4,102pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SSM6P49NU-LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
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Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | 2 P-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 4A | |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.5A, 10V | |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.74nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 10V | |
| Power - Max | 1W | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-WDFN Exposed Pad | |
| Supplier Device Package | 6-UDFN (2x2) |
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