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20V|180mA|150mW
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MOSFET 2N-CH 20V 0.18A ES6
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- SOT-563, SOT-666
- Packaging
- —
- Weight
- —
Total Inventory
5,680pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SSM6N35FE-LM from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 180mA | |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V | |
| Power - Max | 150mW | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | ES6 (1.6x1.6) |
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