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20V|100mA|200mW
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MOSFET 2N-CH 20V 0.1A US6
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- 6-TSSOP, SC-88, SOT-363
- Packaging
- —
- Weight
- —
Total Inventory
3,731pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SSM6N16FUTE85LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 100mA | |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V | |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3pF @ 3V | |
| Power - Max | 200mW | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | US6 |
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