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30V|400mA, 200mA|300mW
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MOSFET N/P-CH 30V 0.4A/0.2A US6
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- 6-TSSOP, SC-88, SOT-363
- Packaging
- —
- Weight
- —
Total Inventory
7,785pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SSM6L09FUTE85LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | N and P-Channel | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 400mA, 200mA | |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 200MA, 10V | |
| Vgs(th) (Max) @ Id | 1.8V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 5V | |
| Power - Max | 300mW | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | US6 |
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