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20V|100mA (Ta)|200mW (Ta)
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MOSFET N-CH 20V 0.1A USV
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- USV
- Packaging
- —
- Weight
- —
Total Inventory
323pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SSM5N16FUTE85LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | π-MOSVI | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V | |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3pF @ 3V | |
| FET Feature | - | |
| Power Dissipation (Max) | 200mW (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | USV | |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
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