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SSM3K7002BSU-LF

60V|200mA (Ta)|150mW (Ta)
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MOSFET N-CH 60V .2A USM

Specifications

Brand
Toshiba Semiconductor and Storage
Package
USM
Packaging
—
Weight
—

Total Inventory

177pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SSM3K7002BSU-LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds17pF @ 25V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageUSM
Package / CaseSC-70, SOT-323

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Datasheet & Documents

ssm3k7002bsu-lf.pdf

PDF Document · 5 pages

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