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40V|2A (Ta)|1W (Ta)
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MOSFET N-CH 40V 2A CST3B
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- CST3B
- Packaging
- —
- Weight
- —
Total Inventory
15,527pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SSM3K59CTB-L3F from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSVII-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 40V | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V | |
| Rds On (Max) @ Id, Vgs | 215mOhm @ 1A, 8V | |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 1.1nC @ 4.2V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 130pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | CST3B | |
| Package / Case | 3-SMD, No Lead |
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