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20V|6A (Ta)|1W (Ta)
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SMALL LOW ON RESISTANCE MOSFET
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- SOT-23F
- Packaging
- —
- Weight
- —
Total Inventory
15,342pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SSM3J355R-LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSVII | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 30.1mOhm @ 4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 16.6nC @ 4.5V | |
| Vgs (Max) | ±10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1030pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23F | |
| Package / Case | SOT-23-3 Flat Leads |
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