Heisener Electronics
BOM

SSM3J168F-LF

60V|400mA (Ta)|1.2W (Ta)
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MOSFET P-CH 60V 400MA S-MINI

Specifications

Brand
Toshiba Semiconductor and Storage
Package
S-Mini
Packaging
—
Weight
—

Total Inventory

119pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SSM3J168F-LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVI
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds82pF @ 10V
FET Feature-
Power Dissipation (Max)1.2W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageS-Mini
Package / CaseTO-236-3, SC-59, SOT-23-3

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