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55 V|80A (Tc)|190W (Tc)
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N-CHANNEL POWER MOSFET
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO220-3-1
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SPP80N06S209 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55 V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 125µA | |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3140 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 190W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO220-3-1 | |
| Package / Case | TO-220-3 |
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