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SPP80N06S2-H5

55V|80A (Tc)|300W (Tc)
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MOSFET N-CH 55V 80A TO-220

Specifications

Brand
Infineon Technologies
Package
PG-TO220-3-1
Packaging
—
Weight
—

Total Inventory

445pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SPP80N06S2-H5 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs155nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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Datasheet & Documents

spp80n06s2-h5.pdf

PDF Document · 8 pages

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