SPP20N65C3XKSA1
650V|20.7A (Tc)|208W (Tc)
原装正品全球货源快速交付品质认证技术支持批量优惠
MOSFET N-CH 650V 20.7A TO-220-3
规格参数
- 品牌
- Infineon Technologies
- 封装
- PG-TO220-3-1
- 包装方式
- —
库存总量
761个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 Infineon Technologies 的 SPP20N65C3XKSA1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V | |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 208W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO220-3-1 | |
| Package / Case | TO-220-3 |
推荐产品
RES 150 OHM 10W 1% AXIAL
RES SMD 5.36 OHM 1% 1/10W 0603
FIXED IND 2.2UH 1.7A 102 MOHM
CAP FILM 0.27UF 5% 100VDC RADIAL
CAP CER 0.1UF 50V BX 1210
CAP CER 4700PF 250V C0G/NP0 2225
.050'' BOARD SPACERS
CONN RCPT MALE 22POS GOLD CRIMP
GT 4C 4#16S PIN RECP JAM
CONN EDGE DUAL FMALE 100POS .100
