Heisener Electronics
BOM

SPP20N60C3XKSA1

600V|20.7A (Tc)|208W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 20.7A TO-220

Specifications

Brand
Infineon Technologies
Package
PG-TO220-3-1
Packaging
—
Weight
—

Total Inventory

491pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how SPP20N60C3XKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs114nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 25V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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Datasheet & Documents

spi20n60c3hksa1.pdf

PDF Document · 15 pages

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